Tianjin Key Laboratory of Composite and Functional Materials, School of Materials Science & Engineering, Tianjin University, Tianjin 300072, P R China.
Nanoscale. 2012 Mar 21;4(6):2060-5. doi: 10.1039/c2nr11930g. Epub 2012 Feb 17.
MgB(2) superconductors with unique microstructures were rapidly fabricated at low temperatures, and exhibited significantly improved critical current density (J(c)). According to the microstructure observations, the prepared samples consisted of lamellar nano MgB(2) grains with many embedded nanoimpurities (about 10 nm). The formation of these lamellar nano MgB(2) grains is associated with the presence of a local Mg-Cu liquid at sintering temperatures as low as 575 °C. The ball milling treatment of the original powders also plays a positive role in the growth of lamellar grains. Based on an analysis of the relationship between resistivity and temperature, the lamellar nano MgB(2) grains in the prepared sample possess better grain connectivity than the typical morphology of MgB(2) samples prepared by traditional high-temperature sintering. Furthermore, the presence of many nano MgB(2) grain boundaries and nano impurities in the prepared sample can obviously increase the flux pinning centers in accordance with the analysis of flux pinning behavior. Both factors mentioned above contribute to the significant improvement in J(c) from low field to relative high field. The method developed in the present work is an effective and low-cost way to further enhance J(c) in MgB(2) superconductors across a wide range of applied magnetic fields without using expensive nanometer-sized dopants.
在低温下快速制备出具有独特微观结构的 MgB(2) 超导体,表现出显著提高的临界电流密度(J(c))。根据微观结构观察,所制备的样品由层状纳米 MgB(2) 晶粒组成,其中嵌入了许多纳米杂质(约 10nm)。这些层状纳米 MgB(2) 晶粒的形成与在低至 575°C 的烧结温度下存在局部 Mg-Cu 液相有关。原始粉末的球磨处理也对层状晶粒的生长起到了积极的作用。基于对电阻率与温度关系的分析,与传统高温烧结制备的典型 MgB(2) 样品相比,所制备样品中的层状纳米 MgB(2) 晶粒具有更好的晶粒连接性。此外,在所制备的样品中存在许多纳米 MgB(2) 晶界和纳米杂质,可以根据磁通钉扎行为的分析明显增加磁通钉扎中心。上述两个因素都有助于在从低场到相对高场的范围内显著提高 J(c)。本工作中所开发的方法是一种有效且低成本的方法,可以在不使用昂贵的纳米尺寸掺杂剂的情况下,在广泛的应用磁场范围内进一步提高 MgB(2) 超导体的 J(c)。