Institute of Physics, Poznan University of Technology, Nieszawska 13a, 61-965 Poznan, Poland.
Sensors (Basel). 2011;11(1):876-85. doi: 10.3390/s110100876. Epub 2011 Jan 14.
We report on the preparation of the first complete extreme temperature Hall sensor. This means that the extreme-temperature magnetic sensitive semiconductor structure is built-in an extreme-temperature package especially designed for that purpose. The working temperature range of the sensor extends from -270 °C to +300 °C. The extreme-temperature Hall-sensor active element is a heavily n-doped InSb layer epitaxially grown on GaAs. The magnetic sensitivity of the sensor is ca. 100 mV/T and its temperature coefficient is less than 0.04 %/K. This sensor may find applications in the car, aircraft, spacecraft, military and oil and gas industries.
我们报告了第一个完整的极端温度霍尔传感器的制备。这意味着极端温度磁敏半导体结构被内置在一个专门为此目的设计的极端温度封装中。传感器的工作温度范围从-270°C扩展到+300°C。极端温度霍尔传感器的有源元件是一个在 GaAs 上外延生长的重 n 掺杂 InSb 层。传感器的磁灵敏度约为 100 mV/T，其温度系数小于 0.04 %/K。该传感器可应用于汽车、飞机、航天器、军事和石油天然气行业。
