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iNOS 介介导的继发性炎症反应在实验性脑挫伤后在不同大鼠品系间存在差异。

iNOS-mediated secondary inflammatory response differs between rat strains following experimental brain contusion.

机构信息

Department of Clinical Neuroscience, Section of Neurosurgery and Neuroimmunology, Karolinska Institutet, Stockholm, Sweden.

出版信息

Acta Neurochir (Wien). 2012 Apr;154(4):689-97. doi: 10.1007/s00701-012-1297-1. Epub 2012 Feb 24.

Abstract

BACKGROUND

Nitric oxide is a key mediator of post-traumatic inflammation in the brain. We examined the expressions of iNOS, nNOS, and eNOS in inbred DA and PVGa rat strains where DA is susceptible to autoimmune neuroinflammation and PVGa-resistant.

METHODS

Parietal contusions using a weight drop model were produced in five rats per genotype. After 24 h, the brains were removed and analyzed using a range of immunohistochemical methods.

RESULTS

PVGa presented significantly increased iNOS expression in infiltrating inflammatory cells in the perilesional area compared to DA (p < 0.05). The amount of w3/13-positive infiltrating inflammatory cells did not differ between strains. eNOS and nNOS expression did not differ between strains. iNOS-positive cells coexpressed neuronal (NeuN), macrophage (ED-1), and leucocyte (w3/13) markers. MnSOD was significantly increased in PVGa (p < 0.05). 3-Nitrotyrosine, a measure of peroxynitrite levels, and fluoro-jade stained neuronal degeneration, did not differ between strains.

CONCLUSIONS

Two inbred rat strains with genetically determined differences in susceptibility to develop autoimmune disease displayed different levels of the inflammatory and anti-inflammatory mediators iNOS and MnSOD, indicating genetic regulation. Interestingly, the increased levels of iNOS did not lead to elevated expression of the neuronal cell-death marker fluoro-jade. The increased iNOS expression was correlated with increased expression of superoxide scavenger MnSOD. Excessive peroxynitrite formation was probably prevented by limitation of available superoxide. Subsequently, the higher expression of potentially deleterious iNOS in PVGa did not result in increased neuronal death.

摘要

背景

一氧化氮是大脑创伤后炎症的关键介质。我们研究了同基因 DA 和 PVGa 大鼠品系中诱导型一氧化氮合酶(iNOS)、神经元型一氧化氮合酶(nNOS)和内皮型一氧化氮合酶(eNOS)的表达,其中 DA 易发生自身免疫性神经炎症,而 PVGa 则具有抗性。

方法

使用重物跌落模型在每种基因型的 5 只大鼠中造成顶叶挫伤。24 小时后,取出大脑并使用一系列免疫组织化学方法进行分析。

结果

与 DA 相比,PVGa 大鼠在损伤周围区域浸润性炎症细胞中 iNOS 表达显著增加(p < 0.05)。两种品系的 w3/13 阳性浸润性炎症细胞数量没有差异。eNOS 和 nNOS 表达在两种品系之间没有差异。iNOS 阳性细胞共表达神经元(NeuN)、巨噬细胞(ED-1)和白细胞(w3/13)标志物。PVGa 中 MnSOD 显著增加(p < 0.05)。3-硝基酪氨酸是过氧亚硝酸盐水平的衡量标准,氟代-杰德染色神经元变性在两种品系之间没有差异。

结论

两种同基因大鼠品系在易患自身免疫性疾病的遗传差异方面表现出不同水平的促炎和抗炎介质 iNOS 和 MnSOD,表明遗传调控。有趣的是,iNOS 水平的升高并没有导致神经元细胞死亡标志物氟代-杰德的表达升高。iNOS 表达的增加与超氧化物清除剂 MnSOD 的表达增加相关。过量的过氧亚硝酸盐形成可能通过限制可用的超氧化物来预防。随后,PVGa 中潜在有害的 iNOS 更高表达并没有导致神经元死亡增加。

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