Department of Electrophysics, National Chiao-Tung University, Hsinchu, Taiwan.
Opt Lett. 2012 Mar 1;37(5):945-7. doi: 10.1364/OL.37.000945.
We demonstrate the widely linear and broadband terahertz (THz) generation on GaSe:Te crystals by femtosecond laser pulses. It was found that the dopant, Te atoms, in GaSe crystals significantly enhances the efficiency of THz generation, and its central frequency can be tuned by varying the crystal thickness through non-phase-matched optical rectification. Moreover, the wide-ranging linearity for the optical-to-THz conversion and central-frequency-tunable THz generation promise for GaSe:Te crystals to be potential materials for high-power (>1.36 μW) THz applications.
我们通过飞秒激光脉冲展示了 GaSe:Te 晶体的宽线性和宽带太赫兹（THz）产生。研究发现，GaSe 晶体中的掺杂剂 Te 原子显著提高了 THz 产生的效率，并且通过非相位匹配光整流可以通过改变晶体厚度来调节其中心频率。此外，光学到 THz 转换的宽线性和中心频率可调谐的 THz 产生使得 GaSe:Te 晶体有望成为高功率 (>1.36 μW) THz 应用的潜在材料。
