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电化学反应表征在氧化铟锡(ITO)电极上的硅烷自组装单层(SAMs)——调节电极-电解质界面的电子转移行为。

Electrochemical characterization of self-assembled monolayers (SAMs) of silanes on indium tin oxide (ITO) electrodes--tuning electron transfer behaviour across electrode-electrolyte interface.

机构信息

Electrodics and Electrocatalysis Division, CSIR, Central Electrochemical Research Institute, Karaikudi 630 006, Tamilnadu, India.

出版信息

J Colloid Interface Sci. 2012 May 15;374(1):241-9. doi: 10.1016/j.jcis.2012.02.007. Epub 2012 Feb 15.

Abstract

In this work, we have systematically investigated the formation and characterization of Self-assembled Monolayer (SAM) films of several silanes on indium tin oxide (ITO) surfaces. Silane molecules having different domains namely substrate binding domain (siloxanes), electron transport region (aliphatic and aromatic spacer) and terminal functional groups (-SH, -CH(3) groups) are employed for the study in order to tune the electron transfer (ET) behaviour across SAM modified electrode-electrolyte interface. Structural characterization of these monolayer films is carried out using X-ray photoelectron spectroscopy (XPS) studies. Wettability (hydrophilic and hydrophobic nature) of such modified electrodes is evaluated using contact angle measurements. ET behaviour of these modified electrodes is investigated by electrochemical techniques namely cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) using K(4)Fe(II)(CN)(6)|K(3)Fe(III)(CN)(6) redox couple as a probe. Disappearance of redox peaks in the CV measurements and formation of semicircle having a higher charge transfer resistance (R(ct)) values during EIS studies suggest that the resultant monolayer films are compact, highly ordered with very low defects and posses good blocking property with less pinholes. The heterogeneous ET rate constant (k) values are determined from EIS by fitting them to an appropriate equivalent circuit model. Based on our results, we comment on tuning the ET behaviour across the interface by a proper choice of spacer region.

摘要

在这项工作中,我们系统地研究了几种硅烷在铟锡氧化物(ITO)表面上自组装单层(SAM)的形成和特性。我们使用了具有不同结构域的硅烷分子,包括基底结合域(硅氧烷)、电子传输区(脂肪族和芳香族间隔基)和末端官能团(-SH、-CH(3)基团),以调节通过 SAM 修饰的电极-电解质界面的电子转移(ET)行为。使用 X 射线光电子能谱(XPS)研究对这些单层膜的结构进行了表征。通过接触角测量评估了这些修饰电极的润湿性(亲水和疏水性质)。通过电化学技术,即循环伏安法(CV)和电化学阻抗谱(EIS),使用 K(4)Fe(II)(CN)(6)|K(3)Fe(III)(CN)(6)氧化还原偶作为探针,研究了这些修饰电极的 ET 行为。在 CV 测量中,氧化还原峰消失,在 EIS 研究中形成具有更高电荷转移电阻(R(ct))值的半圆,这表明所得的单层膜是紧密的、高度有序的,具有非常低的缺陷,并且具有良好的阻挡性能,很少有针孔。通过将它们拟合到适当的等效电路模型,从 EIS 确定了非均相 ET 速率常数(k)值。根据我们的结果,我们通过适当选择间隔区来评论调节界面处的 ET 行为。

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