Ultrashort superradiant pulse generation from a GaN/InGaN heterostructure.

作者信息

Olle V F, Vasil'ev P P, Wonfor A, Penty R V, White I H

机构信息

Centre for Photonic Systems, Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK.

出版信息

Opt Express. 2012 Mar 26;20(7):7035-9. doi: 10.1364/OE.20.007035.

DOI:10.1364/OE.20.007035

PMID:22453383

Abstract

Dicke superradiance from a two-section violet GaN/InGaN semiconductor laser diode is demonstrated for the first time. In the superradiance regime, optical pulses with peak powers in excess of 2.8 W and durations as short as 1.4 ps are generated at repetition rates of up to 10 MHz at the emission wavelength of 408 nm. The properties of superradiant pulse generation from these GaN/InGaN laser diodes are very similar to those reported for infrared AlGaAs/GaAs laser diodes.

摘要