Onaran Efe, Onbasli M Cengiz, Yesilyurt Alper, Yu Hyun Yong, Nayfeh Ammar M, Okyay Ali K
Department of Electrical and Electronics Engineering, Bilkent University, Ankara 06800, Turkey.
Opt Express. 2012 Mar 26;20(7):7608-15. doi: 10.1364/OE.20.007608.
Single crystal Silicon-Germanium multi-quantum well layers were epitaxially grown on silicon substrates. Very high quality films were achieved with high level of control utilizing recently developed MHAH epitaxial technique. MHAH growth technique facilitates the monolithic integration of photonic functionality such as modulators and photodetectors with low-cost silicon VLSI technology. Mesa structured p-i-n photodetectors were fabricated with low reverse leakage currents of ~10 mA/cm² and responsivity values exceeding 0.1 A/W. Moreover, the spectral responsivity of fabricated detectors can be tuned by applied voltage.
单晶硅锗多量子阱层在硅衬底上外延生长。利用最近开发的MHAH外延技术，在高度可控的情况下实现了非常高质量的薄膜。MHAH生长技术有助于将调制器和光电探测器等光子功能与低成本的硅超大规模集成电路技术进行单片集成。制备的台面结构p-i-n光电探测器具有约10 mA/cm²的低反向漏电流和超过0.1 A/W的响应度值。此外，所制备探测器的光谱响应度可通过施加电压进行调节。
