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1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser.

作者信息

Rantamäki Antti, Rautiainen Jussi, Lyytikäinen Jari, Sirbu Alexei, Mereuta Alexandru, Kapon Eli, Okhotnikov Oleg G

机构信息

Optoelectronics Research Centre, Tampere University of Technology, Korkeakoulunkatu 3, 33720 Tampere, Finland.

出版信息

Opt Express. 2012 Apr 9;20(8):9046-51. doi: 10.1364/OE.20.009046.

DOI:10.1364/OE.20.009046
PMID:22513615
Abstract

We demonstrate an optically pumped semiconductor disk laser operating at 1580 nm with 4.6 W of output power, which represents the highest output power reported from this type of laser. 1 W of output power at 785 nm with nearly diffraction-limited beam has been achieved from this laser through intracavity frequency doubling, which offers an attractive alternative to Ti:sapphire lasers and laser diodes in a number of applications, e.g., in spectroscopy, atomic cooling and biophotonics.

摘要

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