用于基于磷化铟的光子集成电路的高速光电二极管。

High-speed photodiodes for InP-based photonic integrated circuits.

作者信息

Rouvalis E, Chtioui M, Tran M, Lelarge F, van Dijk F, Fice M J, Renaud C C, Carpintero G, Seeds A J

机构信息

Department of Electronic and Electrical Engineering, University College London, Torrington Place, WC1E 7JE, UK.

出版信息

Opt Express. 2012 Apr 9;20(8):9172-7. doi: 10.1364/OE.20.009172.

DOI:10.1364/OE.20.009172

PMID:22513628

Abstract

We demonstrate the feasibility of monolithic integration of evanescently coupled Uni-Traveling Carrier Photodiodes (UTC-PDs) having a bandwidth exceeding 100 GHz with Multimode Interference (MMI) couplers. This platform is suitable for active-passive, butt-joint monolithic integration with various Multiple Quantum Well (MQW) devices for narrow linewidth millimeter-wave photomixing sources. The fabricated devices achieved a high 3-dB bandwidth of up to 110 GHz and a generated output power of more than 0 dBm (1 mW) at 120 GHz with a flat frequency response over the microwave F-band (90-140 GHz).

摘要

我们展示了将带宽超过100 GHz的倏逝耦合单偏振载流子光电二极管（UTC-PD）与多模干涉（MMI）耦合器进行单片集成的可行性。该平台适用于与各种多量子阱（MQW）器件进行有源-无源对接单片集成，以实现窄线宽毫米波光混频源。所制造的器件实现了高达110 GHz的高3 dB带宽，在120 GHz时产生的输出功率超过0 dBm（1 mW），并且在微波F波段（90 - 140 GHz）具有平坦的频率响应。