Department of Physics, The University of Texas at Austin, Austin, Texas 78712, United States.
Nano Lett. 2012 Jun 13;12(6):2936-40. doi: 10.1021/nl300610w. Epub 2012 Apr 25.
We demonstrate that the one-dimensional (1D) transport channels that appear in the gap when graphene nanoroads are embedded in boron nitride (BN) sheets are more robust when they are inserted at AB/BA grain boundaries. Our conclusions are based on ab initio electronic structure calculations for a variety of different crystal orientations and bonding arrangements at the BN/C interfaces. This property is related to the valley Hall conductivity present in the BN band structure and to the topologically protected kink states that appear in continuum Dirac models with position-dependent masses.
我们证明了当石墨烯纳米通道嵌入氮化硼（BN）片时，在 AB/BA 晶界处插入一维（1D）输运通道更为稳定。我们的结论基于对 BN/C 界面处不同晶体取向和键合排列的从头算电子结构计算。这种性质与 BN 能带结构中的谷霍尔电导率以及具有位置相关质量的连续 Dirac 模型中出现的拓扑保护扭结态有关。
