Department of Chemistry, University of Aberdeen, Meston Walk, Aberdeen AB24 3UE, UK.
J Am Chem Soc. 2012 May 30;134(21):8766-9. doi: 10.1021/ja302328t. Epub 2012 May 17.
Colossal magnetoresistance is a rare phenomenon in which the electronic resistivity of a material can be decreased by orders of magnitude upon application of a magnetic field. Such an effect could be the basis of the next generation of memory devices. Here we report CMR in the antiferromagnetic oxypnictide NdMnAsO(1-x)F(x) as a result of competition between an antiferromagnetic insulating phase and a paramagnetic semiconductor upon application of a magnetic field. Mn(2+) oxypnictides are relatively unexplored, and tailored synthesis of novel compounds could result in an array of materials for further investigation and optimization.
巨磁电阻是一种罕见的现象，即在施加磁场时，材料的电子电阻率可以降低几个数量级。这种效应可能是下一代存储设备的基础。在这里，我们报道了反铁磁氧磷化物 NdMnAsO(1-x)F(x)中的 CMR，这是由于在施加磁场时，反铁磁绝缘相和顺磁半导体之间的竞争。Mn(2+)氧磷化物相对来说还没有被充分研究，通过定制新型化合物的合成，可以得到一系列的材料，以便进一步研究和优化。
