Institute of Microsystems Engineering, University of Freiburg, Georges Koehler Allee 103, Freiburg, Germany.
Nanotechnology. 2012 Jun 15;23(23):235607. doi: 10.1088/0957-4484/23/23/235607.
In this work, the controlled fabrication of highly ordered ZnO nanowire (NW) arrays on silicon substrates is reported. Si NWs fabricated by a combination of phase shift lithography and etching are used as a template and are subsequently substituted by ZnO NWs with a dry-etching technique and atomic layer deposition. This fabrication technique allows the vertical ZnO NWs to be fabricated on 4 in Si wafers. Room temperature photoluminescence and micro-photoluminescence are used to observe the optical properties of the atomic layer deposition (ALD) based ZnO NWs. The sharp UV luminescence observed from the ALD ZnO NWs is unexpected for the polycrystalline nanostructure. Surprisingly, the defect related luminescence is much decreased compared to an ALD ZnO film deposited at the same time ona plane substrate. Electrical characterization was carried out by using nanomanipulators. With the p-type Si substrate and the n-type ZnO NWs the nanodevices represent p–n NW diodes.The nanowire diodes show a very high breakthrough potential which implies that the ALD ZnO NWs can be used for future electronic applications.
本文报道了在硅衬底上可控制备高度有序的氧化锌纳米线（NW）阵列。通过相移光刻和刻蚀相结合的方法制备的硅 NW 用作模板，然后通过干法刻蚀和原子层沉积技术被 ZnO NW 取代。这种制造技术允许在 4 英寸的 Si 晶圆上制造垂直的 ZnO NW。室温光致发光和微光致发光用于观察原子层沉积（ALD）基 ZnO NW 的光学性质。从 ALD ZnO NW 观察到的尖锐的紫外发光对于多晶纳米结构来说是出乎意料的。令人惊讶的是，与同时沉积在平面衬底上的 ALD ZnO 薄膜相比，缺陷相关的发光大大减少。通过使用纳米操作器进行了电特性表征。使用 p 型 Si 衬底和 n 型 ZnO NW，纳米器件代表 p-n NW 二极管。纳米线二极管显示出非常高的击穿电位，这意味着 ALD ZnO NW 可用于未来的电子应用。
