Feng C, Wang S G, Yang M Y, Zhang E, Zhan Q, Jiang Y, Li B H, Yu G H
Department of Materials Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083, China.
J Nanosci Nanotechnol. 2012 Feb;12(2):1089-93. doi: 10.1166/jnn.2012.4276.
Based on interfacial manipulation of the MgO single crystal substrate and non-magnetic AIN compound, a L1(0)-FePt perpendicular ultrathin film with the structure of MgO/FePt-AIN/Ta was designed, prepared, and investigated. The film is comprised of L1(0)-FePt "magnetic islands," which exhibits a perpendicular magnetic anisotropy (PMA), tunable coercivity (Hc), and interparticle exchange coupling (IEC). The MgO substrate promotes PMA of the film because of interfacial control of the FePt lattice orientation. The AIN compound is doped to increase the difference of surface energy between FePt layer and MgO substrate and to suppress the growth of FePt grains, which takes control of island growth mode of FePt atoms. The AIN compound also acts as isolator of L1(0)-FePt islands to pin the sites of FePt domains, resulting in the tunability of Hc and IEC of the films.
基于对MgO单晶衬底和非磁性AIN化合物的界面操控,设计、制备并研究了一种具有MgO/FePt-AIN/Ta结构的L1(0)-FePt垂直超薄膜。该薄膜由呈现垂直磁各向异性(PMA)、可调矫顽力(Hc)和颗粒间交换耦合(IEC)的L1(0)-FePt“磁性岛”组成。MgO衬底由于对FePt晶格取向的界面控制而促进了薄膜的PMA。掺杂AIN化合物是为了增加FePt层与MgO衬底之间的表面能差异,并抑制FePt晶粒的生长,从而控制FePt原子的岛状生长模式。AIN化合物还作为L1(0)-FePt岛的隔离层,固定FePt畴的位置,从而实现薄膜Hc和IEC的可调性。