Dong Kai-Feng, Jin Fang, Mo Wen-Qin, Song Jun-Lei, Cheng Wei-Ming
School of Automation, China University of Geosciences, Wuhan 430074, China.
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
J Nanosci Nanotechnol. 2018 Apr 1;18(4):2711-2715. doi: 10.1166/jnn.2018.14343.
The effects of TiN-MgO intermediate layer on the microstructure and magnetic properties of FePt-SiNx-C films were investigated. With doping MgO into TiN, three components were formed, including titanium dioxide, titanium nitride and titanium oxynitride. This caused the decrease of the surface energy and the increase of the interface energy, and further induced the promotion of island growth of FePt, thus the improvement of the isolation and the decrease of FePt grains. On the other hand, the decrease of surface energy and the forming of some titanium dioxide with doping MgO would accompany the deterioration of epitaxial growth and thus the deterioration of the perpendicular magnetic anisotropy of FePt films in a certain degree. By optimizing the concentration of TiN and MgO, the FePt-SiNx-C films with small grain size of 5.86±1.03 nm and good perpendicular anisotropy would be obtained.
研究了TiN-MgO中间层对FePt-SiNx-C薄膜微观结构和磁性能的影响。通过向TiN中掺杂MgO，形成了包括二氧化钛、氮化钛和氮氧化钛在内的三种组分。这导致表面能降低和界面能增加，并进一步促进了FePt的岛状生长，从而提高了隔离度并减小了FePt晶粒。另一方面，表面能的降低以及掺杂MgO形成的一些二氧化钛会伴随着外延生长的恶化，进而在一定程度上导致FePt薄膜垂直磁各向异性的恶化。通过优化TiN和MgO的浓度，可以获得具有5.86±1.03 nm小晶粒尺寸和良好垂直各向异性的FePt-SiNx-C薄膜。
