Oh Yong Taeg, Choi Bum Ho, Shin Dong Chan
Department of Advanced Materials Engineering, Chosun University, Gwangju, 501-759, Korea.
J Nanosci Nanotechnol. 2012 Feb;12(2):1713-6. doi: 10.1166/jnn.2012.4693.
The optical properties of electrochemically deposited ZnO thin films on colloidal crystal film of SiO2 microspheres structures were studied. Colloidal crystal film of SiO2 microspheres were self-assembled by evaporation using SiO2 in solution at a constant 0.1 wt%. ZnO in thin films was then electrochemically deposited on to colloidal crystal film of SiO2 microspheres. During electrochemical deposition, the content of Zn(NO3)2 x 6H2O in solution was 5 wt%, and the process's conditions were varied between of 2-4 V and 30-120 s at room temperature, with subsequent heat-treatment between 200 and 400 degrees C. A smooth surface and uniform thickness of 1.8 microm were obtained at 3 V for 90 s. The highest PL peak intensity was obtained in the ZnO thin film heat-treated at 400 degrees C. The double layered ZnO/SiO2 colloidal crystals showed clearly better emission properties than the SiO2/ZnO and ZnO structures.
研究了在二氧化硅微球结构的胶体晶体薄膜上电沉积氧化锌薄膜的光学性质。通过在溶液中以0.1 wt%的恒定浓度蒸发二氧化硅，自组装得到二氧化硅微球的胶体晶体薄膜。然后将薄膜中的氧化锌电化学沉积到二氧化硅微球的胶体晶体薄膜上。在电化学沉积过程中，溶液中Zn(NO3)2·6H2O的含量为5 wt%，在室温下，过程条件在2 - 4 V和30 - 120 s之间变化，随后在200至400摄氏度之间进行热处理。在3 V下处理90 s时，获得了光滑的表面和1.8微米的均匀厚度。在400摄氏度下热处理的氧化锌薄膜中获得了最高的PL峰强度。双层ZnO/SiO2胶体晶体的发射性能明显优于SiO2/ZnO和ZnO结构。
