Kim Kyoungwon, Lee Deuk-Hee, Lee Sang Yeol, Jang Gun-Eik, Kim Jin-Sang
Electronic Materials Research Center, Korea Institute of Science and Technology, P,O, Box 131, Cheongryang, Seoul, 130-650, South Korea.
Nanoscale Res Lett. 2012 May 30;7(1):273. doi: 10.1186/1556-276X-7-273.
Silver and aluminum-co-doped zinc oxide (SAZO) nanowires (NWs) of 1, 3, and 5 at.% were grown on sapphire substrates. Low-temperature photoluminescence (PL) was studied experimentally to investigate the p-type behavior observed by the exciton bound to a neutral acceptor (A0X). The A0X was not observed in the 1 at.% SAZO NWs by low-temperature PL because 1 at.% SAZO NWs do not have a Ag-O chemical bonding as confirmed by XPS measurement. The activation energies (Ea) of the A0X were calculated to be about 18.14 and 19.77 meV for 3 and 5 at.% SAZO NWs, respectively, which are lower than the activation energy of single Ag-doped NW which is about 25 meV. These results indicate that Ag/Al co-doping method is a good candidate to make optically p-type ZnO NWs.
分别以1%、3%和5%的原子百分比将银和铝共掺杂的氧化锌（SAZO）纳米线生长在蓝宝石衬底上。通过实验研究了低温光致发光（PL），以探究与中性受主（A0X）结合的激子所观察到的p型行为。通过低温PL在1%原子百分比的SAZO纳米线中未观察到A0X，因为如XPS测量所证实的，1%原子百分比的SAZO纳米线不存在Ag-O化学键。对于3%和5%原子百分比的SAZO纳米线，A0X的激活能（Ea）经计算分别约为18.14和19.77毫电子伏特，这低于单银掺杂纳米线约25毫电子伏特的激活能。这些结果表明，Ag/Al共掺杂方法是制备光学p型ZnO纳米线的良好候选方法。
