Institute of Theoretical and Simulational Chemistry, Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, 150080 Harbin, People's Republic of China.
Phys Chem Chem Phys. 2012 Jul 14;14(26):9451-9. doi: 10.1039/c2cp40857k. Epub 2012 May 30.
The influence of lattice dynamics on carrier mobility has received much attention in organic crystalline semiconductors, because the molecular components are held together by weak interactions and the transfer integrals between neighboring molecular orbitals are extremely sensitive to small nuclear displacements. Recently, it has been shown that the dynamic disorder has little effect on hole mobility in the ab plane of pentacene, but a reasonable explanation is absent for such a puzzle. To better understand the effect of lattice vibrations on carrier transport, a further study is required for other organic materials. In this work, a mixed molecular dynamic and quantum-chemical methodology is used to assess the effect of nuclear dynamics on hole mobility in the dianthra[2,3-b:2',3'-f]-thieno[3,2-b]thiophene (DATT) crystals which exhibit high air stability with the hole mobility as large as that in rubrene-based devices. It is found that the lattice vibrations lead to an increasing encumbrance for hole transport in the ab plane of the DATT crystals as the temperature increases. By comparing the crystal structures of DATT and pentacene, the reduced hole mobility in DATT is attributed to the unsymmetric arrays of nearest-neighboring molecular dimers in the ab plane, because the electronic coupling exhibits unbalanced thermal fluctuations for the nearest-neighboring dimers which then induces a stronger oscillation for carriers along the directions with asymmetric packing. To further relate the dynamic disorder with hole transport, the variations of anisotropic mobilities are also analyzed. As a result, the negligible effect of lattice dynamics on the hole mobility in pentacene is explained by the centrosymmetric molecular packing of the nearest-neighboring molecular pairs in the ab plane.
晶格动力学对载流子迁移率的影响在有机晶体半导体中受到了广泛关注,因为分子组件之间的相互作用较弱,相邻分子轨道之间的转移积分对微小的核位移极其敏感。最近的研究表明,动态无序对并五苯的 ab 面中的空穴迁移率影响不大,但对于这种困惑,还没有合理的解释。为了更好地理解晶格振动对载流子输运的影响,需要对其他有机材料进行进一步的研究。在这项工作中,采用了混合分子动力学和量子化学方法来评估核动力学对具有高空气稳定性和与基于苝的器件相当的空穴迁移率的二并苯并[2,3-b:2',3'-f]-噻吩并[3,2-b]噻吩(DATT)晶体中空穴迁移率的影响。结果表明,随着温度的升高,晶格振动导致 DATT 晶体 ab 面中空穴输运的阻碍增加。通过比较 DATT 和并五苯的晶体结构,发现 DATT 中的空穴迁移率降低归因于 ab 面中最近邻分子二聚体的非对称排列,因为电子耦合对最近邻二聚体表现出不平衡的热涨落,从而导致载流子在不对称堆积方向上的振荡更强。为了进一步将动态无序与空穴输运联系起来,还分析了各向异性迁移率的变化。结果表明,晶格动力学对并五苯中空穴迁移率的影响可以用 ab 面中最近邻分子对的中心对称分子堆积来解释。