Lu Liyou, Chen Jiajun, Li Lijuan, Wang Wenyong
Department of Physics and Astronomy, University of Wyoming, P,O, Box 3905, Laramie, WY, 82071, USA.
Nanoscale Res Lett. 2012 Jun 6;7(1):293. doi: 10.1186/1556-276X-7-293.
In this work, we report a direct synthesis of vertically aligned ZnO nanowires on fluorine-doped tin oxide-coated substrates using the chemical vapor deposition (CVD) method. ZnO nanowires with a length of more than 30 μm were synthesized, and dye-sensitized solar cells (DSSCs) based on the as-grown nanowires were fabricated, which showed improvement of the device performance compared to those fabricated using transferred ZnO nanowires. Dependence of the cell performance on nanowire length and annealing temperature was also examined. This synthesis method provided a straightforward, one-step CVD process to grow relatively long ZnO nanowires and avoided subsequent nanowire transfer process, which simplified DSSC fabrication and improved cell performance.
在本工作中，我们报道了一种使用化学气相沉积（CVD）方法在氟掺杂氧化锡涂层衬底上直接合成垂直排列的氧化锌纳米线。合成了长度超过30μm的氧化锌纳米线，并制备了基于所生长纳米线的染料敏化太阳能电池（DSSC），与使用转移的氧化锌纳米线制备的电池相比，该电池的器件性能有所提高。还研究了电池性能对纳米线长度和退火温度的依赖性。这种合成方法提供了一种直接的一步CVD工艺来生长相对较长的氧化锌纳米线，并避免了随后的纳米线转移过程，简化了DSSC的制备并提高了电池性能。
