Helmholtz-Zentrum Berlin GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany.
ChemSusChem. 2012 Jul;5(7):1227-32. doi: 10.1002/cssc.201100691. Epub 2012 Jun 15.
Recently, it has been shown that an abundant material, polymeric carbon nitride, can produce hydrogen from water under visible-light irradiation in the presence of a sacrificial donor. We present herein the preparation and characterization of graphitic carbon nitride (g-C(3)N(4)) films on p-type semiconducting CuGaSe(2) chalcopyrite thin-film substrates by thermal condensation of a dicyandiamide precursor under inert-gas conditions. Structural and surface morphological studies of the carbon nitride films suggest a high porosity of g-C(3)N(4) thin films consisting of a network of nanocrystallites. Photoelectrochemical investigations show light-induced hydrogen evolution upon cathodic polarization for a wide range of proton concentrations in the aqueous electrolyte. Additionally, synchrotron radiation-based photoelectron spectroscopy has been applied to study the surface/near-surface chemical composition of the utilized g-C(3)N(4) film photocathodes. For the first time, it has been shown that g-C(3)N(4) films coated on p-type CuGaSe(2) thin films can be successfully applied as new photoelectrochemical composite photocathodes for light-induced hydrogen evolution.
最近，研究表明在可见光照射下，在牺牲供体的存在下，丰富的聚合碳氮化物可以将水转化为氢气。本文通过在惰性气体条件下热缩合双氰胺前体，在 p 型半导体 CuGaSe(2)黄铜矿薄膜衬底上制备和表征了石墨相氮化碳（g-C(3)N(4)）薄膜。氮化碳薄膜的结构和表面形貌研究表明，g-C(3)N(4)薄膜具有高孔隙率，由纳米晶网络组成。光电化学研究表明，在宽范围的质子浓度的水溶液电解质中，在阴极极化时会发生光诱导的氢气析出。此外，还应用基于同步辐射的光电子能谱研究了所使用的 g-C(3)N(4)薄膜光电阴极的表面/近表面化学组成。首次表明，涂覆在 p 型 CuGaSe(2)薄膜上的 g-C(3)N(4)薄膜可以成功地用作光诱导析氢的新型光电化学复合光电阴极。
