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高功率 CMUT 设计与实验验证。

High-power CMUTs: design and experimental verification.

机构信息

Electronics Engineering Department, Sabanci University, Istanbul, Turkey.

出版信息

IEEE Trans Ultrason Ferroelectr Freq Control. 2012 Jun;59(6):1276-84. doi: 10.1109/TUFFC.2012.2318.

Abstract

Capacitive micromachined ultrasonic transducers (CMUTs) have great potential to compete with piezoelectric transducers in high-power applications. As the output pressures increase, nonlinearity of CMUT must be reconsidered and optimization is required to reduce harmonic distortions. In this paper, we describe a design approach in which uncollapsed CMUT array elements are sized so as to operate at the maximum radiation impedance and have gap heights such that the generated electrostatic force can sustain a plate displacement with full swing at the given drive amplitude. The proposed design enables high output pressures and low harmonic distortions at the output. An equivalent circuit model of the array is used that accurately simulates the uncollapsed mode of operation. The model facilities the design of CMUT parameters for high-pressure output, without the intensive need for computationally involved FEM tools. The optimized design requires a relatively thick plate compared with a conventional CMUT plate. Thus, we used a silicon wafer as the CMUT plate. The fabrication process involves an anodic bonding process for bonding the silicon plate with the glass substrate. To eliminate the bias voltage, which may cause charging problems, the CMUT array is driven with large continuous wave signals at half of the resonant frequency. The fabricated arrays are tested in an oil tank by applying a 125-V peak 5-cycle burst sinusoidal signal at 1.44 MHz. The applied voltage is increased until the plate is about to touch the bottom electrode to get the maximum peak displacement. The observed pressure is about 1.8 MPa with -28 dBc second harmonic at the surface of the array.

摘要

电容式微机械超声换能器(CMUT)在高功率应用中具有很大的潜力与压电换能器竞争。随着输出压力的增加,必须重新考虑 CMUT 的非线性,并进行优化以减少谐波失真。在本文中,我们描述了一种设计方法,其中未塌缩的 CMUT 阵元尺寸设计为在最大辐射阻抗下工作,并且具有间隙高度,使得产生的静电力可以在给定的驱动幅度下维持板的全摆幅位移。所提出的设计能够在输出端实现高输出压力和低谐波失真。使用了一个等效电路模型来准确模拟未塌缩的工作模式。该模型方便了 CMUT 参数的设计,以实现高压输出,而无需大量使用计算密集型的有限元工具。与传统的 CMUT 板相比,优化设计需要一个相对较厚的板。因此,我们使用硅片作为 CMUT 板。制造过程涉及阳极键合工艺,用于将硅片与玻璃衬底键合。为了消除可能导致充电问题的偏置电压,CMUT 阵列以半谐振频率的大连续波信号驱动。通过在 1.44MHz 处施加 125V 峰值 5 个周期的突发正弦信号,在油槽中对制造的阵列进行测试。施加的电压增加,直到板即将接触到底电极以获得最大峰值位移。在阵列表面观察到的压力约为 1.8MPa,二次谐波为-28dBc。

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