被动调 Q 微片掺铒、掺镱:YAl3(BO3)4 二极体泵浦激光器。

Passively Q-switched microchip Er, Yb:YAl3(BO3)4 diode-pumped laser.

机构信息

Center for Optical Materials and Technologies, Belarusian National Technical University, 65 Nezavisimosti Avenue, Building 17, Minsk, Belarus.

出版信息

Opt Lett. 2012 Jul 1;37(13):2745-7. doi: 10.1364/OL.37.002745.

DOI:10.1364/OL.37.002745

PMID:22743515

Abstract

We report, for the first time to our knowledge, a diode-pumped cw and passively Q-switched microchip Er, Yb:YAl(3)(BO(3))(4) laser. A maximal output power of 800 mW at 1602 nm in the cw regime was obtained at an absorbed pump power of 7.7 W. By using Co(2+):MgAl(2)O(4) as a saturable absorber, a TEM(00)-mode Q-switched average output power of 315 mW was demonstrated at 1522 nm, with pulse duration of 5 ns and pulse energy of 5.25 μJ at a repetition rate of 60 kHz.

摘要

我们首次报告了一种二极管泵浦连续波和被动调 Q 的微芯片 Er，Yb：YAl(3)(BO(3))(4)激光器。在 7.7 W 的吸收泵浦功率下，获得了在 1602 nm 处的最大连续波输出功率 800 mW。通过使用 Co(2+)：MgAl(2)O(4)作为可饱和吸收体，在 1522 nm 处演示了 TEM(00)模式 Q 开关平均输出功率为 315 mW，脉冲持续时间为 5 ns，脉冲能量为 5.25 μJ，重复频率为 60 kHz。