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通过磁光荧光光谱研究 CdSe 纳米晶体聚集体中的温度和场依赖能量转移。

Temperature- and field-dependent energy transfer in CdSe nanocrystal aggregates studied by magneto-photoluminescence spectroscopy.

机构信息

Department of Chemistry and Biochemistry, Florida State University, Tallahassee, FL 32306-4390, USA.

出版信息

Phys Chem Chem Phys. 2012 Aug 21;14(31):11053-9. doi: 10.1039/c2cp41586k. Epub 2012 Jul 6.

Abstract

The influence of temperature and applied magnetic fields on photoluminescence (PL) emission and electronic energy transfer (ET) of both isolated and aggregated CdSe nanocrystals was investigated. Following 400-nm excitation, temperature-dependent, intensity-integrated and energy-resolved PL measurements were used to quantify the emission wavelength and amplitude of isolated CdSe nanocrystals. The results indicated an approximately three-fold increase in PL intensity upon decreasing the temperature from 300 K to 6 K; this was attributed to a reduction of charge carrier access to nanocrystal surface trap states and suppression of thermal loss channels. Temperature-dependent PL measurements of aggregated CdSe nanocrystals, which included both energy-donating and -accepting particles, were analyzed using a modified version of Förster theory. Temperature-dependent ET efficiency increased from 0.55 to 0.75 upon decreasing the sample temperature from 225 K to 6 K, and the ET data contained the same trend observed for the PL of isolated nanoclusters. The application of magnetic fields to increase nanocrystal ET efficiency was studied using magneto-photoluminescence measurements recorded at a sample temperature of 1.6 K. We demonstrated that the exciton fine structure population of the donor was varied using applied magnetic fields, which in turn dictated the PL yield and the resultant ET efficiency of the CdSe nanocrystal aggregate system. The experimental data indicated an ET efficiency enhancement of approximately 7%, which was limited by the random orientation of the spherical nanocrystals in the thin film.

摘要

研究了温度和外加磁场对孤立和聚集的 CdSe 纳米晶体的光致发光(PL)发射和电子能量转移(ET)的影响。在 400nm 激发后,使用温度相关、强度积分和能量分辨 PL 测量来量化孤立 CdSe 纳米晶体的发射波长和幅度。结果表明,在从 300K 降低到 6K 的过程中,PL 强度增加了大约三倍;这归因于载流子进入纳米晶表面陷阱态的减少和热损失通道的抑制。对包括供体和受体粒子的聚集 CdSe 纳米晶体的温度依赖性 PL 测量使用改进的Förster 理论进行了分析。当将样品温度从 225K 降低到 6K 时,温度依赖性 ET 效率从 0.55 增加到 0.75,并且 ET 数据包含与孤立纳米团簇的 PL 相同的趋势。使用磁光致发光测量研究了施加磁场以提高纳米晶体 ET 效率的情况,该测量是在样品温度为 1.6K 时记录的。我们证明了通过施加磁场可以改变供体的激子精细结构分布,从而决定了 CdSe 纳米晶聚集体系统的 PL 产率和相应的 ET 效率。实验数据表明 ET 效率提高了约 7%,这受到薄膜中球形纳米晶体随机取向的限制。

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