School of Physics, Damghan University, PO Box 36715/364, Damghan, Iran.
J Phys Condens Matter. 2012 Aug 15;24(32):325702, 1-6. doi: 10.1088/0953-8984/24/32/325702. Epub 2012 Jul 12.
We investigate the tunneling conductance in a normal metal/insulator/d-wave superconductor (NM/I/d-wave SC) junction with a barrier of thickness d and with an arbitrary gate voltage V(0) applied across the barrier region, formed on the surface of a topological insulator, using the Dirac-Bogoliubov-de Gennes equation and Blonder-Tinkham-Klapwijk (BTK) formalism. We find that the tunneling conductance as a function of both d and V(0) displays an oscillatory behavior whose amplitude decreases with increase of V(0). We also find that when the Andreev resonant condition is met, the tunneling conductance approaches a maximum value of 2G(0), independent of the gate voltage V(0).
我们利用狄拉克-玻戈留波夫-德热纳方程和布兰德-廷克-克拉彭维克（BTK）形式研究了在拓扑绝缘体表面形成的具有厚度为 d 的势垒和任意栅极电压 V(0)的正常金属/绝缘层/d 波超导体（NM/I/d 波 SC）结中的隧道电导。我们发现，隧道电导作为 d 和 V(0) 的函数显示出波动行为，其幅度随 V(0)的增加而减小。我们还发现，当安德烈夫共振条件得到满足时，隧道电导接近 2G(0)的最大值，与栅极电压 V(0)无关。
