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[Ni(ptdt)2]有机分子导体的高压电子结构。

The high-pressure electronic structure of the [Ni(ptdt)2] organic molecular conductor.

机构信息

Department of Physics, Science Laboratories, University of Durham, South Road, Durham DH1 3LE, United Kingdom.

出版信息

J Chem Phys. 2012 Jul 14;137(2):024701. doi: 10.1063/1.4731692.

Abstract

The electronic structure of the single component molecular crystal [Ni(ptdt)(2)] (ptdt = propylenedithiotetrathiafulvalenedithiolate) is determined at ambient and high pressure using density functional theory. The electronic structure of this crystal is found to be of the "crossing bands" type with respect to the dispersion of the HOMO and LUMO, resulting in a small, non-zero density of states at the Fermi energy at ambient pressure, indicating that this crystal is a "poor quality" metal, and is consistent with the crystal's resistivity exhibiting a semiconductor-like temperature dependence. The ambient pressure band structure is found to be predominantly one-dimensional, reflecting enhanced intermolecular interactions along the [100] stacking direction. Our calculations indicate that the band structure becomes two-dimensional at high pressures and reveals the role of shortened intermolecular contacts in this phenomenon. The integrity of the molecular structure is found to be maintained up to at least 22 GPa. The electronic structure is found to exhibit a crossing bands nature up to 22 GPa, where enhanced intermolecular interactions increase the Brillouin zone centre HOMO-LUMO gap from 0.05 eV at ambient pressure to 0.15 eV at 22 GPa; this enhanced HOMO-LUMO interaction ensures that enhancement of a metallic state in this crystal cannot be simply achieved through the application of pressure, but rather requires some rearrangement of the molecular packing. Enhanced HOMO-LUMO interactions result in a small density of states at the Fermi energy for the high pressure window 19.8-22 GPa, and our calculations show that there is no change in the nature of the electronic structure at the Fermi energy for these pressures. We correspondingly find no evidence of an electronic semiconducting-metal insulator transition for these pressures, contrary to recent experimental evidence [Cui et al., J. Am. Chem. Soc. 131, 6358 (2009)].

摘要

使用密度泛函理论,在环境压力和高压下确定了单组分分子晶体[Ni(ptdt)(2)](ptdt = 丙二硫代四噻吩二硫代富瓦烯二硫醇盐)的电子结构。发现该晶体的电子结构相对于 HOMO 和 LUMO 的色散具有“交叉能带”类型,导致在环境压力下费米能级处的态密度不为零,表明该晶体是一种“劣质”金属,并且与晶体的电阻率表现出半导体样的温度依赖性一致。发现环境压力能带结构主要是一维的,反映了沿[100]堆积方向增强的分子间相互作用。我们的计算表明,在高压下能带结构变为二维,并揭示了缩短分子间接触在这一现象中的作用。发现分子结构的完整性至少保持到 22 GPa。电子结构被发现具有交叉能带性质,直到 22 GPa,其中增强的分子间相互作用将布里渊区中心 HOMO-LUMO 能隙从环境压力下的 0.05 eV 增加到 22 GPa 下的 0.15 eV;这种增强的 HOMO-LUMO 相互作用确保了在该晶体中增强金属态不能简单地通过施加压力来实现,而是需要对分子堆积进行某种重新排列。增强的 HOMO-LUMO 相互作用导致在 19.8-22 GPa 的高压窗口处费米能级的态密度较小,并且我们的计算表明在这些压力下费米能级处的电子结构性质没有变化。我们相应地没有发现这些压力下电子半导体-金属-绝缘体转变的证据,与最近的实验证据[Cui 等人,J. Am. Chem. Soc. 131, 6358(2009)]相反。

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