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在电势扰动下超薄金膜的时变散射。

Time-dependent scattering of ultrathin gold film under potential perturbation.

机构信息

IBIOS, Department of Electrical and Electronic Engineering, University of Nottingham, NG7 2RD, United Kingdom.

出版信息

ACS Appl Mater Interfaces. 2012 Aug;4(8):3829-36. doi: 10.1021/am301231m. Epub 2012 Jul 30.

DOI:10.1021/am301231m
PMID:22809099
Abstract

Shifts of the plasmon scattering band of ultrathin gold films under the effect of dynamic applied potential were studied in single wavelength measurements. The effect on scattering of applied potential was ascribed to electronic charging and discharging of the gold film. Scattering transients in response to square-wave potential modulation had an exponential form which depended on the potential step width, the modulation frequency and the nature of the ions. The presence of an AC signal component induced by ±10 mV potential modulated at 2 kHz indicated the capability of very thin gold film to respond to high frequency voltage.

摘要

在动态应用电势的作用下,超薄膜金的等离子体散射带的移动得到了研究。应用电势对散射的影响归因于金膜的电子充电和放电。对方波电势调制的散射瞬变具有指数形式,其取决于电势阶跃宽度、调制频率和离子的性质。在 2 kHz 调制的±10 mV 电势的交流信号分量的存在表明了非常薄的金膜对高频电压响应的能力。

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