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采用侧向模式耦合的多层压电陶瓷大幅提高了医学成像和高强度聚焦超声(HIFU)相控阵的电阻抗。

Large improvement of the electrical impedance of imaging and high-intensity focused ultrasound (HIFU) phased arrays using multilayer piezoelectric ceramics coupled in lateral mode.

机构信息

Sunnybrook Health Science Centre, Universityof Toronto, Medical Biophysics, Toronto, ON, Canada.

出版信息

IEEE Trans Ultrason Ferroelectr Freq Control. 2012 Jul;59(7):1584-95. doi: 10.1109/TUFFC.2012.2358.

Abstract

With a change in phased-array configuration from one dimension to two, the electrical impedance of the array elements is substantially increased because of their decreased width (w)-to-thickness (t) ratio. The most common way to compensate for this impedance increase is to employ electrical matching circuits at a high cost of fabrication complexity and effort. In this paper, we introduce a multilayer lateral-mode coupling method for phased-array construction. The direct comparison showed that the electrical impedance of a single-layer transducer driven in thickness mode is 1/(n²(1/(w/t))²) times that of an n-layer lateral mode transducer. A large reduction of the electrical impedance showed the impact and benefit of the lateral-mode coupling method. A one-dimensional linear 32-element 770-kHz imaging array and a 42-element 1.45-MHz high-intensity focused ultrasound (HIFU) phased array were fabricated. The averaged electrical impedances of each element were measured to be 58 Ω at the maximum phase angle of -1.2° for the imaging array and 105 Ω at 0° for the HIFU array. The imaging array had a center frequency of 770 kHz with an averaged -6-dB bandwidth of approximately 52%. For the HIFU array, the averaged maximum surface acoustic intensity was measured to be 32.8 W/cm² before failure.

摘要

随着相控阵从一维向二维的配置变化,由于其宽度(w)与厚度(t)的比值减小,阵列元件的电阻抗大大增加。补偿这种阻抗增加的最常见方法是采用电匹配电路,但这会极大地增加制造成本和复杂性。在本文中,我们介绍了一种用于相控阵构建的多层横向模式耦合方法。直接比较表明,在厚度模式下驱动的单层换能器的电阻抗是 n 层横向模式换能器的 1/(n²(1/(w/t))²)倍。电阻抗的大幅降低表明了横向模式耦合方法的影响和益处。我们制作了一个一维线性 32 单元 770 kHz 成像阵列和一个 42 单元 1.45 MHz 高强度聚焦超声(HIFU)相控阵。测量每个元件的平均电阻抗,对于成像阵列,最大相位角为-1.2°时为 58 Ω,对于 HIFU 阵列,最大相位角为 0°时为 105 Ω。成像阵列的中心频率为 770 kHz,平均-6 dB 带宽约为 52%。对于 HIFU 阵列,在失效之前,测量到的平均最大表面声强为 32.8 W/cm²。

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