ISIS & icFRC, Université de Strasbourg & CNRS, 8 allée Gaspard Monge, 67000 Strasbourg, France.
Chemistry. 2012 Aug 13;18(33):10335-47. doi: 10.1002/chem.201201858. Epub 2012 Jul 24.
This article describes the molecular structure-function relationship for a series of biphenylthiol derivatives with varying torsional degree of freedom in their molecular backbone when self-assembled on gold electrodes. These biphenylthiol molecules chemisorbed on Au exhibit different tilt angles with respect to the surface normal and different packing densities. The charge transport through the biphenylthiol self-assembled monolayers (SAMs) showed a characteristic decay trend with the effective monolayer thickness. Based on parallel pathways model the tunneling decay factor β was estimated to be 0.27 Å(-1). The hole mobility of poly(3-hexylthiophene)-based thin-film transistors incorporating a biphenylthiol SAM coating the Au source and drain electrodes revealed a dependence on the injection barrier with the highest occupied molecular orbital (HOMO) level of the semiconductor. The possible role of the resistivity of the SAMs on transistor electrodes on the threshold voltage shift is discussed. The control over the chemical structure, electronic properties, and packing order of the SAMs provides a versatile platform to regulate the charge injection in organic electronic devices.
本文描述了一系列联苯硫醇衍生物在金电极上自组装时,其分子主链中扭转自由度的分子结构-功能关系。这些吸附在 Au 上的联苯硫醇分子相对于表面法线具有不同的倾斜角度和不同的堆积密度。通过联苯硫醇自组装单层(SAM)的电荷传输表现出与有效单层厚度的特征衰减趋势。基于平行途径模型,估计隧道衰减因子β为 0.27 Å(-1)。在包含联苯硫醇 SAM 涂层的 Au 源极和漏极的基于聚(3-己基噻吩)的薄膜晶体管中,空穴迁移率显示出对半导体最高占据分子轨道(HOMO)能级的注入势垒的依赖性。讨论了 SAMs 对晶体管电极的电阻率对阈值电压漂移的可能作用。SAMs 的化学结构、电子性质和堆积顺序的控制为调节有机电子器件中的电荷注入提供了一个通用平台。