McDermott Joseph E, McDowell Matthew, Hill Ian G, Hwang Jaehyung, Kahn Antoine, Bernasek Steven L, Schwartz Jeffrey
Department of Chemistry, Princeton University, Princeton, New Jersey 08544, USA.
J Phys Chem A. 2007 Dec 13;111(49):12333-8. doi: 10.1021/jp075177v. Epub 2007 Nov 13.
Organic thin-film transistors using pentacene as the semiconductor were fabricated on silicon. A series of phosphonate-based self-assembled monolayers (SAMs) was used as a buffer between the silicon dioxide gate dielectric and the active pentacene channel region. Octadecylphosphonate, (quarterthiophene)phosphonate, and (9-anthracene)phosphonate SAMs were examined. Significant improvements in the sub-threshold slope and threshold voltage were observed for each SAM treatment as compared to control devices fabricated without the buffer. These improvements were related to structural motif relationships between the pentacene semiconductor and the SAM constituents. Measured transistor properties were consistent with a reduction in density of charge trapping states at the semiconductor-dielectric interface that was effected by introduction of the self-assembled monolayer.
以并五苯为半导体的有机薄膜晶体管在硅上制备而成。一系列基于膦酸酯的自组装单分子层（SAMs）被用作二氧化硅栅极电介质与活性并五苯沟道区之间的缓冲层。对十八烷基膦酸酯、（四噻吩）膦酸酯和（9-蒽）膦酸酯自组装单分子层进行了研究。与未使用缓冲层制备的对照器件相比，每种自组装单分子层处理后的亚阈值斜率和阈值电压都有显著改善。这些改善与并五苯半导体和自组装单分子层成分之间的结构基序关系有关。测量得到的晶体管特性与通过引入自组装单分子层而实现的半导体-电介质界面电荷俘获态密度降低相一致。
