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电子背散射衍射在锡须晶体学表征中的应用。

Application of electron backscatter diffraction for crystallographic characterization of tin whiskers.

机构信息

Sandia National Laboratories, Materials Characterization Department, P.O. Box 5800, MS 0886, Albuquerque, NM 87185-0886, USA.

出版信息

Microsc Microanal. 2012 Aug;18(4):876-84. doi: 10.1017/S143192761200044X. Epub 2012 Jul 26.

Abstract

Understanding the growth of whiskers or high aspect ratio features on substrates can be aided when the crystallography of the feature is known. This study has evaluated three methods that utilize electron backscatter diffraction (EBSD) for the determination of the crystallographic growth direction of an individual whisker. EBSD has traditionally been a technique applied to planar, polished samples, and thus the use of EBSD for out-of-surface features is somewhat more difficult and requires additional steps. One of the methods requires the whiskers to be removed from the substrate resulting in the loss of valuable physical growth relationships between the whisker and the substrate. The other two techniques do not suffer this disadvantage and provide the physical growth information as well as the crystallographic growth directions. The final choice of method depends on the information required. The accuracy and the advantages and disadvantages of each method are discussed.

摘要

当特征的晶体学已知时,有助于理解基底上的须状或高纵横比特征的生长。本研究评估了三种利用电子背散射衍射(EBSD)确定单个须状晶体生长方向的方法。EBSD 传统上是一种应用于平面、抛光样品的技术,因此,EBSD 用于表面外特征的应用有些困难,需要额外的步骤。其中一种方法要求将须状从基底上去除,从而导致须状与基底之间有价值的物理生长关系的损失。另外两种技术没有这种缺点,并且提供了物理生长信息以及晶体生长方向。方法的最终选择取决于所需的信息。讨论了每种方法的准确性以及优缺点。

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