Hong C H, Jo Y J, Kim H A, Park M J, Kwak J S
Department of Printed Electronics Engineering (WCU), Sunchon National University, Jeonnam 540-742, Korea.
J Nanosci Nanotechnol. 2012 May;12(5):4163-7. doi: 10.1166/jnn.2012.5934.
We have investigated the effect of insertion of a Ag layer in ITO film as well as electron beam irradiation to the multilayer films on the electrical and optical properties of the ITO-based multilayer deposited by magnetron sputtering method at room temperature. Inserting a very thin Ag layer between ITO layers resulted in a significant decrease in sheet resistance and increased the optical band gap of the ITO/Ag/ITO multilayer to 4.35 eV, followed by a high transparency of approximately 80% at a wavelength of 375 nm. We have also fabricated ultraviolet light-emitting diodes (LED) by using the ITO/Ag/ITO p-type electrode with/without electron beam irradiation. The results show that the UV-LEDs having ITO/Ag/ITO p-electrode with electron beam irradiation produced 19% higher optical output power due to the low absorption of light in the p-type electrode.
我们研究了在氧化铟锡（ITO）薄膜中插入银层以及对多层膜进行电子束辐照，对通过磁控溅射法在室温下沉积的基于ITO的多层膜的电学和光学性能的影响。在ITO层之间插入非常薄的银层会导致薄层电阻显著降低，并将ITO/Ag/ITO多层膜的光学带隙增加到4.35电子伏特，随后在375纳米波长处具有约80%的高透明度。我们还使用了经过/未经过电子束辐照的ITO/Ag/ITO p型电极制造了紫外发光二极管（LED）。结果表明，具有经过电子束辐照的ITO/Ag/ITO p型电极的紫外LED由于p型电极中光的低吸收而产生的光输出功率高19%。
