Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States.
Nano Lett. 2012 Sep 12;12(9):4518-22. doi: 10.1021/nl3016329. Epub 2012 Aug 13.
We demonstrate a graphene-based electro-absorption modulator achieving extraordinary control of terahertz reflectance. By concentrating the electric field intensity in an active layer of graphene, an extraordinary modulation depth of 64% is achieved while simultaneously exhibiting low insertion loss (∼2 dB), which is remarkable since the active region of the device is atomically thin. This modulator performance, among the best reported to date, indicates the enormous potential of graphene for terahertz reconfigurable optoelectronic devices.
我们展示了一种基于石墨烯的电吸收调制器，实现了对太赫兹反射率的非凡控制。通过在石墨烯的有源层集中电场强度，实现了 64%的非凡调制深度，同时表现出低插入损耗（约 2 dB），这是显著的，因为器件的有源区是原子薄的。这种调制器性能是迄今为止报道的最佳性能之一，表明了石墨烯在太赫兹可重构光电器件中的巨大潜力。
