Institut de Chimie Moléculaire et des Matériaux d'Orsay, Université Paris Sud 11, CNRS, Bât. 420, 15 rue Georges Clemenceau, 91405 Orsay Cedex, France.
Chem Commun (Camb). 2012 Sep 18;48(72):9071-3. doi: 10.1039/c2cc34134d. Epub 2012 Aug 3.
The application of a negative gate voltage on a carbon nanotube field effect transistor decorated by a binuclear Tb(III) complex leads to the generation of a negatively charged mononuclear one, presenting an electron density transfer to the nanotube and ambipolar behaviour.
在由双核 Tb(III) 配合物修饰的碳纳米管场效应晶体管上施加负栅极电压会导致生成带负电荷的单核配合物,从而发生向纳米管的电子密度转移和双极性行为。