基于大晶粒多晶硅的β伏打电池的设计与仿真
Design and simulation of betavoltaic battery using large-grain polysilicon.
作者信息
Yao Shulin, Song Zijun, Wang Xiang, San Haisheng, Yu Yuxi
机构信息
Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, Fujian 361005, People's Republic of China.
出版信息
Appl Radiat Isot. 2012 Oct;70(10):2388-94. doi: 10.1016/j.apradiso.2012.06.009. Epub 2012 Jun 20.
In this paper, we present the design and simulation of a p-n junction betavoltaic battery based on large-grain polysilicon. By the Monte Carlo simulation, the average penetration depth were obtained, according to which the optimal depletion region width was designed. The carriers transport model of large-grain polysilicon is used to determine the diffusion length of minority carrier. By optimizing the doping concentration, the maximum power conversion efficiency can be achieved to be 0.90% with a 10 mCi/cm(2) Ni-63 source radiation.
在本文中，我们展示了一种基于大晶粒多晶硅的p-n结β伏打电池的设计与模拟。通过蒙特卡罗模拟，获得了平均穿透深度，并据此设计了最佳耗尽区宽度。利用大晶粒多晶硅的载流子输运模型确定少数载流子的扩散长度。通过优化掺杂浓度，在10 mCi/cm(2) 的Ni-63源辐射下，最大功率转换效率可达到0.90%。
Zotero 插件