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在 Ca3Co4O9 单晶体中通过 Cu 掺杂增强电子关联和热电响应。

Enhanced electronic correlation and thermoelectric response by Cu-doping in Ca3Co4O9 single crystals.

机构信息

Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, People's Republic of China.

出版信息

Dalton Trans. 2012 Aug 28;41(36):11176-86. doi: 10.1039/c2dt31346d.

Abstract

The structure, anisotropic magnetic, electrical and thermal transport properties for single crystals of Ca(3)Co(4-x)Cu(x)O(9) (x = 0, 0.2, 0.4, 0.6 and 0.8) have been investigated systematically. The Cu-doping with x = 0.2 at Co-site is sufficient to drive the low-temperature spin-glass state in the Ca(3)Co(4)O(9) system. The value of resistivity along ab-plane decreases monotonously with increasing x in the whole temperature range studied, and around room temperature, the in-plane resistivity of Ca(3)Co(3.2)Cu(0.8)O(9) is about 71% smaller than that of the undoped sample. The temperature region where the Fermi-liquid transport mechanism dominates becomes remarkably narrowed due to the Cu-doping while the electronic correlation in the system is enhanced. With further addition of Cu in the Ca(3)Co(4)O(9) system, the in-plane thermopower (S(ab)) increases slowly and the room-temperature S(ab) for Ca(3)Co(3.2)Cu(0.8)O(9) is about 17% larger than that of the undoped sample. As a result, the power factor along the ab-plane is enhanced by about 3.8 times compared to the undoped sample. The results are suggested to originate from the variations of carrier concentration and electronic correlation in this system via the different Cu-doping states: Cu(3+)/Cu(2+) (Cu(3+) major) into the CoO(2) layer for x ≤ 0.4, while Cu(2+)/Cu(3+) (Cu(2+) major) into the Ca(2)CoO(3) layers for x > 0.4.

摘要

系统地研究了 Ca(3)Co(4-x)Cu(x)O(9)(x = 0、0.2、0.4、0.6 和 0.8)单晶体的结构、各向异性磁、电和热输运性质。在 Ca(3)Co(4)O(9)体系中,Co 位的 Cu 掺杂量 x = 0.2 足以驱动低温自旋玻璃态。在整个研究温度范围内,ab 平面上的电阻率随 x 的增加单调下降,在室温附近,Ca(3)Co(3.2)Cu(0.8)O(9)的面内电阻率比未掺杂样品小约 71%。由于 Cu 掺杂,电子关联增强,费米液体输运机制主导的温度区域明显变窄。随着在 Ca(3)Co(4)O(9)体系中进一步添加 Cu,ab 平面上的热功率(S(ab))缓慢增加,Ca(3)Co(3.2)Cu(0.8)O(9)在室温下的 S(ab)比未掺杂样品大约 17%。结果,ab 平面上的功率因数比未掺杂样品提高了约 3.8 倍。这些结果源于通过不同的 Cu 掺杂状态在该体系中载流子浓度和电子关联的变化:对于 x ≤ 0.4,Cu(3+)/Cu(2+)(以 Cu(3+)为主)进入 CoO(2)层,而对于 x > 0.4,Cu(2+)/Cu(3+)(以 Cu(2+)为主)进入 Ca(2)CoO(3)层。

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