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氧化石墨烯作为单原子阻挡层。

Graphene oxide as a monoatomic blocking layer.

机构信息

Nano-Science Center & Department of Chemistry, University of Copenhagen, Copenhagen, Denmark.

出版信息

ACS Nano. 2012 Sep 25;6(9):8022-9. doi: 10.1021/nn302628q. Epub 2012 Aug 22.

DOI:10.1021/nn302628q
PMID:22891605
Abstract

Monolayer graphene oxide (mGO) is shown to effectively protect molecular thin films from reorganization and function as an atomically thin barrier for vapor-deposited Ti/Al metal top electrodes. Fragile organic Langmuir-Blodgett (LB) films of C(22) fatty acid cadmium salts (cadmium(II) behenate) were covered by a compressed mosaic LB film of mGO flakes. These hybrid LB films were examined with atomic force microscopy (AFM) and X-ray reflectivity, both with and without the metal top electrodes. While the AFM enabled surface and morphology analysis, the X-ray reflectivity allowed for a detailed structural depth profiling of the organic film and mGO layer below the metal top layers. The structure of the mGO-protected LB films was found to be perfectly preserved; in contrast, it has previously been shown that metal deposition completely destroys the first two LB layers of unprotected films. This study provides clear evidence of the efficient protection offered by a single atomic layer of GO.

摘要

单层氧化石墨烯(mGO)有效地保护了分子薄膜免受重组,并作为原子级薄的阻挡层,用于气相沉积的 Ti/Al 金属顶电极。脆弱的有机朗缪尔-布洛杰特(LB)薄膜的 C(22)脂肪酸镉盐(二十二烷酸镉(II))被压缩的 mGO 薄片 mosaic LB 薄膜覆盖。这些混合 LB 薄膜通过原子力显微镜(AFM)和 X 射线反射率进行了检查,都有和没有金属顶电极。虽然 AFM 能够进行表面和形态分析,但 X 射线反射率允许对有机薄膜和金属顶电极下方的 mGO 层进行详细的结构深度分析。研究发现,mGO 保护的 LB 薄膜的结构得到了完美的保留;相比之下,以前的研究表明,金属沉积会完全破坏未保护薄膜的前两层 LB 层。这项研究为 GO 单层提供的有效保护提供了明确的证据。

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