Cavendish Laboratory, University of Cambridge, J, J, Thomson Avenue, Cambridge, CB3 0HE, UK.
Nanoscale Res Lett. 2012 Aug 16;7(1):459. doi: 10.1186/1556-276X-7-459.
We report the experimental evidence for the formation of multi-quantum dots in a hydrogenated single-layer graphene flake. The existence of multi-quantum dots is supported by the low-temperature measurements on a field effect transistor structure device. The resulting Coulomb blockade diamonds shown in the color scale plot together with the number of Coulomb peaks exhibit the characteristics of the so-called 'stochastic Coulomb blockade'. A possible explanation for the formation of the multi-quantum dots, which is not observed in pristine graphene to date, was attributed to the impurities and defects unintentionally decorated on a single-layer graphene flake which was not treated with the thermal annealing process. Graphene multi-quantum dots developed around impurities and defect sites during the hydrogen plasma exposure process.
我们报告了在氢化单层石墨烯薄片中形成多量子点的实验证据。低温测量在场效应晶体管结构器件上得到了多量子点存在的支持。在颜色比例尺图中显示的库仑阻塞钻石以及库仑峰的数量表现出所谓的“随机库仑阻塞”的特征。多量子点形成的一种可能解释，在目前为止的原始石墨烯中没有观察到，归因于在没有经过热退火处理的单层石墨烯薄片上无意装饰的杂质和缺陷。在氢等离子体暴露过程中，在杂质和缺陷位置周围形成了石墨烯多量子点。
