Ko Yeong Hwan, Chung Kwan Soo, Yu Jae Su
Department of Electronics and Radio Engineering, Institute for Laser Engineering, Kyung Hee University, 1 Seocheon-dong, Giheung-gu, Yongin-si, Gyeonggi-do 446-701, Republic of Korea.
J Nanosci Nanotechnol. 2012 Jun;12(6):4570-6. doi: 10.1166/jnn.2012.6214.
We fabricated the vertically-aligned zinc oxide (ZnO)/silicon (Si) double nanostructures by simple processes using the metal-assisted chemical etching and a subsequent hydrothermal synthesis, and their optical property was investigated. For efficient antireflection characteristics, Si nanostructures were optimized by changing the size of the dewetted silver (Ag) at different etching times. The thermally dewetted Ag nanoparticles or semi-island films as metal catalysts were controlled by the Ag film thickness and dewetting temperature. To form the ZnO/Si double nanostructures, ZnO nanorods were synthesized on the chemically etched Si nanostructures using a thin sputtered ZnO seed layer. The grown ZnO nanorod arrays (NRAs) exhibited good crystallinity and further reduced the surface reflection due to their antireflective property. The ZnO/Si double nanostructures showed the increased peak intensity of X-ray diffraction as well as the significantly reduced solar weight reflectance of 6.05% compared to 11.71% in the ZnO NRAs on the flat Si substrate. Also, the enhanced antireflection property of ZnO/Si double nanostructures was theoretically analyzed by performing the rigorous coupled wave analysis simulation.
我们通过金属辅助化学蚀刻及后续水热合成的简单工艺制备了垂直排列的氧化锌(ZnO)/硅(Si)双纳米结构,并对其光学性质进行了研究。为实现高效的抗反射特性,通过改变不同蚀刻时间下去湿银(Ag)的尺寸对硅纳米结构进行了优化。作为金属催化剂的热去湿银纳米颗粒或半岛状薄膜由银膜厚度和去湿温度控制。为形成ZnO/Si双纳米结构,利用溅射的ZnO薄种子层在化学蚀刻的硅纳米结构上合成了ZnO纳米棒。生长的ZnO纳米棒阵列(NRA)表现出良好的结晶性,并且由于其抗反射特性进一步降低了表面反射。与平面硅衬底上的ZnO纳米棒阵列中11.71%的太阳权重反射率相比,ZnO/Si双纳米结构的X射线衍射峰强度增加,太阳权重反射率显著降低至6.05%。此外,通过进行严格耦合波分析模拟对ZnO/Si双纳米结构增强的抗反射特性进行了理论分析。