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斜角共沉积法制备 CuSi 复合纳米棒阵列及其结构、电学和光学性能。

The growth of CuSi composite nanorod arrays by oblique angle co-deposition, and their structural, electrical and optical properties.

机构信息

Department of Physics and Astronomy, and Nanoscale Science and Engineering Center, University of Georgia, Athens, GA 30602, USA.

出版信息

Nanotechnology. 2012 Sep 14;23(36):365703. doi: 10.1088/0957-4484/23/36/365703. Epub 2012 Aug 21.

Abstract

Different CuSi composite nanorods with 0-100 at.% Cu were fabricated by an oblique angle co-deposition technique. The effects of increasing Cu during deposition on the morphologies, structures and properties were investigated. During co-evaporation, the addition of Cu decreases the nanorod width and height but increases the nanorod tilting angle. The polarized optical transmission spectra reveal that all the nanorod samples show a remarkable anisotropic response to visible light with an eccentricity e ≈ 1, whereas their optical response to NIR light depends strongly on the Cu composition, and the related eccentricity increases monotonically with the increase of Cu. The obtained amorphous Si film has a resistivity of approximately 4.9 × 10(4) Ω cm. The incorporation of 5-75 at.% Cu increases the electrical conductance from two to eight orders of magnitude. The improved conductance and the unique optical properties of the Si-based nanocomposites could have potential applications for Li-ion battery anode and optical design.

摘要

采用斜角共沉积技术制备了不同铜含量(0-100 原子百分比)的 CuSi 复合纳米棒。研究了沉积过程中铜含量的增加对形貌、结构和性能的影响。在共蒸发过程中,添加铜会降低纳米棒的宽度和高度,但会增加纳米棒的倾斜角度。偏振光传输谱表明,所有纳米棒样品都对可见光表现出显著的各向异性响应,偏心度 e ≈ 1,而它们对近红外光的光学响应强烈依赖于铜的组成,相关偏心度随铜含量的增加单调增加。获得的非晶硅薄膜的电阻率约为 4.9×10(4)Ωcm。掺入 5-75 原子百分比的铜将电导率提高了两个到八个数量级。基于 Si 的纳米复合材料的改善的电导率和独特的光学性质可能在锂离子电池阳极和光学设计方面具有潜在的应用。

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