Department of Electrical and Computer Engineering, University of Alberta, Edmonton, AB T6G 2V4, Canada.
Molecules. 2012 Aug 24;17(9):10119-30. doi: 10.3390/molecules170910119.
We investigate the evolution of copper phthalocyanine thin films as they are etched with argon plasma. Significant morphological changes occur as a result of the ion bombardment; a planar surface quickly becomes an array of nanopillars which are less than 20 nm in diameter. The changes in morphology are independent of plasma power, which controls the etch rate only. Analysis by X-ray photoelectron spectroscopy shows that surface concentrations of copper and oxygen increase with etch time, while carbon and nitrogen are depleted. Despite these changes in surface stoichiometry, we observe no effect on the work function. The absorbance and X-ray diffraction spectra show no changes other than the peaks diminishing with etch time. These findings have important implications for organic photovoltaic devices which seek nanopillar thin films of metal phthalocyanine materials as an optimal structure.
我们研究了铜酞菁薄膜在氩等离子体蚀刻时的演化。由于离子轰击，会发生显著的形态变化；一个平面表面很快变成了直径小于 20nm 的纳米柱阵列。形态的变化与等离子体功率无关，等离子体功率仅控制蚀刻速率。X 射线光电子能谱分析表明，随着蚀刻时间的增加，表面铜和氧的浓度增加，而碳和氮则耗尽。尽管表面化学计量比发生了这些变化，但我们观察到功函数没有受到影响。除了峰随蚀刻时间衰减外，吸收光谱和 X 射线衍射谱没有变化。这些发现对寻求金属酞菁材料纳米柱薄膜作为最佳结构的有机光伏器件具有重要意义。
