Department of Physics, University of Idaho, Moscow, Idaho 83844-0903, USA.
Nano Lett. 2012 Oct 10;12(10):5181-5. doi: 10.1021/nl3022219. Epub 2012 Sep 5.
The photocurrent of individual gallium nitride (GaN) nanowires decorated with Au nanoparticles as function of the wavelength of light (405 nm (blue), 532 nm (green), and 632.8 nm (red)) and nanowire diameter (80 to 400 nm) is reported. The photocurrent scales with photon energy but oscillates with nanowire diameter. The oscillations are described in terms of the scattering of surface plasmon polaritons into allowed transverse magnetic electromagnetic modes of the nanowire that have maximum intensities in the undepleted region of the nanowire. These oscillations do not occur below a nanowire diameter of ~200 nm due to the depletion layer formed at the Au-GaN interface, which completely depletes the nanowire, that is, there is an insufficient density of carriers that can be excited into the conduction band. On the basis of estimations of the depletion depth and solutions of the Helmholtz equation, the maxima in the photocurrent for d > 200 nm are assigned to the two lowest azimuthally symmetric transverse magnetic eigenmodes: (m = 0, n = 1) and (m = 0, n = 2), which have maximum electric field intensities within the undepleted region of the GaN nanowire. The outcome of this work could have far reaching implications on the development of nanophotonics.
本文报道了金纳米颗粒修饰的氮化镓(GaN)纳米线的光电流随光的波长(405nm(蓝色)、532nm(绿色)和 632.8nm(红色))和纳米线直径(80 至 400nm)的变化。光电流与光子能量成正比,但随纳米线直径发生振荡。这些振荡可以用表面等离激元极化激元散射到纳米线的允许横向磁场电磁模式来描述,这些模式在纳米线未耗尽区域具有最大强度。由于在 Au-GaN 界面形成的耗尽层,这些振荡不会在纳米线直径小于~200nm 时发生,耗尽层完全耗尽了纳米线,也就是说,没有足够多的载流子可以被激发到导带中。基于对耗尽深度的估计和亥姆霍兹方程的解,d > 200nm 时光电流的最大值被分配给两个最低的角向对称横向磁场本征模:(m = 0,n = 1)和(m = 0,n = 2),它们在 GaN 纳米线的未耗尽区域具有最大的电场强度。这项工作的结果可能对纳米光子学的发展产生深远的影响。