Department of Materials Science and Engineering, Johns Hopkins University, 206 Maryland Hall, 3400 North Charles Street, Baltimore, Maryland 21218, USA.
J Am Chem Soc. 2012 Sep 12;134(36):14650-3. doi: 10.1021/ja305287p. Epub 2012 Sep 4.
We have increased organic field-effect transistor (OFET) NH(3) response using tris(pentafluorophenyl)borane (TPFB) as a receptor. OFETs with this additive could detect concentrations of 450 ppb v/v, with a limit of detection of 350 ppb, the highest sensitivity reported to date for semiconductor films; in comparison, when triphenylmethane (TPM) or triphenylborane (TFB) was used as an additive, no obvious improvement in the sensitivity was observed. These OFETs also showed considerable selectivity with respect to common organic vapors and stability toward storage. Furthermore, excellent memory of exposure was achieved by keeping the exposed devices in a sealed container stored at -30 °C, the first such capability demonstrated with OFETs.
我们使用三(五氟苯基)硼烷(TPFB)作为受体,提高了有机场效应晶体管(OFET)对氨气的响应。添加这种添加剂的 OFET 可以检测到 450 ppbv 的浓度,检测限为 350 ppbv,这是迄今为止报道的半导体薄膜中最高的灵敏度;相比之下,当使用三苯基甲烷(TPM)或三苯基硼烷(TFB)作为添加剂时,灵敏度没有明显提高。这些 OFET 对常见有机蒸气也具有相当的选择性和存储稳定性。此外,通过将暴露的器件保存在密封容器中并储存在-30°C 下,可以实现出色的暴露记忆,这是首次在 OFET 中展示这种能力。