Wang Wei, Wang Liang, Dai Gaole, Deng Wei, Zhang Xiujuan, Jie Jiansheng, Zhang Xiaohong
Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University Suzhou, Suzhou, 215123 Jiangsu People's Republic of China.
Nanomicro Lett. 2017;9(4):52. doi: 10.1007/s40820-017-0153-5. Epub 2017 Aug 16.
Organic field-effect transistors (OFETs) based on organic micro-/nanocrystals have been widely reported with charge carrier mobility exceeding 1.0 cm V s, demonstrating great potential for high-performance, low-cost organic electronic applications. However, fabrication of large-area organic micro-/nanocrystal arrays with consistent crystal growth direction has posed a significant technical challenge. Here, we describe a solution-processed dip-coating technique to grow large-area, aligned 9,10-bis(phenylethynyl) anthracene (BPEA) and 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PEN) single-crystalline nanoribbon arrays. The method is scalable to a 5 × 10 cm wafer substrate, with around 60% of the wafer surface covered by aligned crystals. The quality of crystals can be easily controlled by tuning the dip-coating speed. Furthermore, OFETs based on well-aligned BPEA and TIPS-PEN single-crystalline nanoribbons were constructed. By optimizing channel lengths and using appropriate metallic electrodes, the BPEA and TIPS-PEN-based OFETs showed hole mobility exceeding 2.0 cm V s (average mobility 1.2 cm V s) and 3.0 cm V s (average mobility 2.0 cm V s), respectively. They both have a high on/off ratio ( / ) > 10. The performance can well satisfy the requirements for light-emitting diodes driving.
基于有机微/纳米晶体的有机场效应晶体管（OFET）已被广泛报道，其载流子迁移率超过1.0 cm² V⁻¹ s⁻¹，展现出在高性能、低成本有机电子应用方面的巨大潜力。然而，制备具有一致晶体生长方向的大面积有机微/纳米晶体阵列面临着重大技术挑战。在此，我们描述了一种溶液处理的浸涂技术，用于生长大面积、排列整齐的9,10-双（苯乙炔基）蒽（BPEA）和6,13-双（三异丙基硅乙炔基）并五苯（TIPS-PEN）单晶纳米带阵列。该方法可扩展到5×10 cm的晶圆基板，约60%的晶圆表面被排列整齐的晶体覆盖。通过调整浸涂速度可以轻松控制晶体质量。此外，构建了基于排列良好的BPEA和TIPS-PEN单晶纳米带的OFET。通过优化沟道长度并使用合适的金属电极，基于BPEA和TIPS-PEN的OFET分别显示出超过2.0 cm² V⁻¹ s⁻¹（平均迁移率1.2 cm² V⁻¹ s⁻¹）和3.0 cm² V⁻¹ s⁻¹（平均迁移率2.0 cm² V⁻¹ s⁻¹）的空穴迁移率。它们都具有高的开/关比（Ion/Ioff）>10。该性能能够很好地满足发光二极管驱动的要求。
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