Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117576.
ACS Appl Mater Interfaces. 2012 Oct 24;4(10):5276-80. doi: 10.1021/am301220h. Epub 2012 Sep 26.
The bipolar charge phenomenon in Cu and Co co-doped zinc oxide (ZnO) film samples has been studied using scanning probe microscopy (SPM) techniques. Those ZnO samples are made using a pulsed laser deposition (PLD) technique. It is found that the addition of Cu and Co dopants suppresses the electron density in ZnO and causes a significant change in the work function (Fermi level) value of the ZnO film; this results in the ohmic nature of the contact between the electrode (probe tip) and codoped sample, whereas this contact exhibits a Schottky nature in the undoped and single-element-doped samples. These results are verified by Kelvin probe force microscopy (KPFM) and ultraviolet photoelectron spectroscopy (UPS) measurements. It is also found that the co-doping (Cu and Co) can stabilize the bipolar charge, whereas Cu doping only stabilizes the positive charge in ZnO thin films.
使用扫描探针显微镜(SPM)技术研究了铜和钴共掺杂氧化锌(ZnO)薄膜样品中的双极性电荷现象。这些 ZnO 样品是使用脉冲激光沉积(PLD)技术制备的。结果发现,Cu 和 Co 掺杂剂的添加抑制了 ZnO 中的电子密度,并导致 ZnO 薄膜功函数(费米能级)值发生显著变化;这导致电极(探针尖端)与共掺杂样品之间的接触呈欧姆特性,而在未掺杂和单元素掺杂样品中,这种接触呈肖特基特性。这些结果通过 Kelvin 探针力显微镜(KPFM)和紫外光电子能谱(UPS)测量得到验证。还发现,共掺杂(Cu 和 Co)可以稳定双极性电荷,而 Cu 掺杂仅稳定 ZnO 薄膜中的正电荷。