Nakajima Designer Nanocluster Assembly Project, ERATO, JST, KSP, 3-2-1 Sakado, Kawasaki 213-0012, Japan.
ACS Nano. 2012 Oct 23;6(10):8728-34. doi: 10.1021/nn302405r. Epub 2012 Sep 7.
The electronic properties of alkanethiol self-assembled monolayers (alkanethiolate SAMs) associated with their molecular-scale geometry are investigated using scanning tunneling microscopy and spectroscopy (STM/STS). We have selectively formed the three types of alkanethiolate SAMs with standing-up, lying-down, and lattice-gas phases by precise thermal annealing of the SAMs which are conventionally prepared by depositing alkanethiol molecules onto Au(111) surface in solution. The empty and filled states of each SAM are evaluated over a wide energy range covering 6 eV above/below the Fermi level (E(F)) using two types of STS on the basis of tunneling current-voltage and distance-voltage measurements. Electronic states originating from rigid covalent bonds between the thiol group and substrate surface are observed near E(F) in the standing-up and lying-down phases but not in the lattice-gas phase. These states contribute to electrical conduction in the tunneling junction at a low bias voltage. At a higher energy, a highly conductive state stemming from the alkyl chain and an image potential state (IPS) formed in a vacuum gap appear in all phases. The IPS shifts toward a higher energy through the change in the geometry of the SAM from the standing-up phase to the lattice-gas phase through the lying-down phase. This is explained by the increasing work function of alkanethiolate/Au(111) with decreasing density of surface molecules.
使用扫描隧道显微镜和光谱学(STM/STS)研究了与分子级几何形状相关的烷硫醇自组装单层(烷硫醇 SAM)的电子特性。我们通过对 SAM 进行精确的热退火,选择性地形成了具有站立、躺下和晶格气体相的三种类型的烷硫醇 SAM,这些 SAM 通常是通过将烷硫醇分子沉积在溶液中的 Au(111)表面上制备的。使用基于隧道电流-电压和距离-电压测量的两种 STS,在覆盖费米能级(E(F))以上/以下 6 eV 的宽能范围内评估了每个 SAM 的空态和填充态。在站立和躺下相中,在 E(F)附近观察到源自硫醇基团与基底表面之间刚性共价键的电子态,但在晶格气体相中没有观察到。这些状态在低偏压下有助于隧道结中的电传导。在更高的能量下,源自烷基链的高度传导状态和在真空间隙中形成的像电势状态(IPS)出现在所有相中。通过 SAM 的几何形状从站立相到晶格气体相再到躺下相的变化,IPS 向更高的能量移动。这可以通过烷硫醇/Au(111)的功函数随表面分子密度的降低而增加来解释。