基于并苯并二噻二唑-四噻吩的高空穴迁移率场效应晶体管。
High-hole-mobility field-effect transistors based on co-benzobisthiadiazole-quaterthiophene.
机构信息
Center for Energy Efficient Materials, University of California, Santa Barbara, CA 93106, USA.
出版信息
Adv Mater. 2012 Dec 4;24(46):6164-8. doi: 10.1002/adma.201202195. Epub 2012 Sep 10.
PMID:22961863
Abstract
High-mobility organic thin film transistors based on a benzobisthiadiazole-containing polymer are presented together with their morphological and optical properties. A very tight packing pattern of "edge-on" orientated polymer chains is observed in their thin films after annealing, and the hole mobility of this polymer is up to 2.5 cm(2) V(-1) s(-1) .
摘要
本文介绍了一种基于含苯并双噻二唑聚合物的高分子有机薄膜晶体管及其形态和光学性质。该聚合物薄膜经退火后呈现出非常紧密的“边缘取向”聚合物链堆积模式，其空穴迁移率高达 2.5 cm(2) V(-1) s(-1) 。
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