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高能碳离子辐照碳纳米管增强电子场发射

Enhanced electron field emission from carbon nanotubes irradiated by energetic C ions.

作者信息

Sun Peng-Cheng, Deng Jian-Hua, Cheng Guo-An, Zheng Rui-Ting, Ping Zhao-Xia

机构信息

Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Laboratory of Nanomaterial and Technology, College of Nuclear Science and Technology, Beijing Normal University, Beijing, 100875, China.

出版信息

J Nanosci Nanotechnol. 2012 Aug;12(8):6510-5. doi: 10.1166/jnn.2012.5429.

Abstract

The field emission performance and structure of the vertically aligned multi-walled carbon nanotube arrays irradiated by energetic C ion with average energy of 40 keV have been investigated. During energetic C ion irradiation, the curves of emission current density versus the applied field of samples shift firstly to low applied fields when the irradiation doses are less than 9.6 x 10(16) cm(-2), and further increase of dose makes the curves reversing to a high applied field, which shows that high dose irradiation in carbon nanotube arrays makes their field emission performance worse. After energetic ion irradiation with a dose of 9.6 x 1016 cm(-2), the turn-on electric field and the threshold electric field of samples decreased from 0.80 and 1.13 V/microm to 0.67 and 0.98 V/microm respectively. Structural analysis of scanning electron microscopy, transmission electron microscopy and Raman spectroscopy indicates that the amorphous carbon nanowire/carbon nanotube hetero nano-structures have been fabricated in the C ion irradiated carbon nanotubes. The enhancement of electron field emission is due to the formation of amorphous carbon nanowires at the tip of carbon nanotube arrays, which is an electron emitting material with low work function.

摘要

研究了平均能量为40keV的高能C离子辐照垂直排列的多壁碳纳米管阵列的场发射性能和结构。在高能C离子辐照过程中,当辐照剂量小于9.6×10(16) cm(-2)时,样品的发射电流密度与外加电场的曲线首先向低外加电场方向移动,剂量进一步增加使曲线反向移向高外加电场,这表明碳纳米管阵列中的高剂量辐照会使其场发射性能变差。在剂量为9.6×1016 cm(-2)的高能离子辐照后,样品的开启电场和阈值电场分别从0.80和1.13 V/μm降至0.67和0.98 V/μm。扫描电子显微镜、透射电子显微镜和拉曼光谱的结构分析表明,在C离子辐照的碳纳米管中制备了非晶碳纳米线/碳纳米管异质纳米结构。电子场发射的增强归因于在碳纳米管阵列尖端形成了非晶碳纳米线,这是一种具有低功函数的电子发射材料。

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