Pulagara Narasimha Vinod, Lahiri Indranil
Nanomaterials and Application Lab., Metallurgical and Materials Engineering Department, Indian Institute of Technology Roorkee, Roorkee, UK-247667, India.
Centre of Excellence: Nanotechnology, Indian Institute of Technology Roorkee, Roorkee, UK-247667, India.
Nanotechnology. 2022 May 4;33(30). doi: 10.1088/1361-6528/ac659f.
An increasing number of emitting sites and higher aspect ratios are constantly being added to field emission systems to further improve their properties. Such an ever-growing demand has thrown light on the development of hierarchical field emitters. Tungsten (W) and carbon nanotubes (CNT) have been commonly reported as potential field emitter materials. The present work focused on constructing a hierarchical field emitter structure of CNTs/W nanowires. The structural characterization has been studied using field emission scanning electron microscopy, high-resolution transmission electron microscopy, and x-ray diffraction to confirm the hierarchical structure formation. The carbon nanotube-tungsten nanowire hierarchical structural emitters have demonstrated high current density (31.5 mA cm), exceptionally low turn-on field (0.068 Vm), and emission stability for more than 152 h. This excellent performance could be related to the formation of a strong as well as the electrically favourable interface between tungsten nanowires and CNTs.
为了进一步改善场发射系统的性能，越来越多的发射位点和更高的纵横比不断被添加到该系统中。这种不断增长的需求推动了分级场发射器的发展。钨（W）和碳纳米管（CNT）通常被报道为潜在的场发射体材料。目前的工作重点是构建碳纳米管/钨纳米线的分级场发射器结构。利用场发射扫描电子显微镜、高分辨率透射电子显微镜和X射线衍射对结构特征进行了研究，以确认分级结构的形成。碳纳米管-钨纳米线分级结构发射器已表现出高电流密度（31.5 mA/cm²）、极低的开启场（0.068 V/μm）以及超过152小时的发射稳定性。这种优异的性能可能与钨纳米线和碳纳米管之间形成的强且电学上有利的界面有关。
