Chang S T, Liu Y C, Ou-Yang H
Department of Electrical Engineering, National Chung Hsing University, Taichung 40227, Taiwan, R.O.C.
J Nanosci Nanotechnol. 2012 Jul;12(7):5469-73. doi: 10.1166/jnn.2012.6251.
Stress distributions in the strained InGaAs PMOSFET with source/drain (S/D) stressors for various lengths and widths were studied with 3D stress simulations. The resulting mobility improvement was analyzed. Compressive stress along the transport direction was found to dominate the hole mobility improvement for the wide width devices. Stress along the vertical direction perpendicular to the gate oxide was found to affect the mobility the least, while stress along the width direction enhanced in the middle wide width region. The impact of channel width and length on performance improvements such as the mobility gain was analyzed using the Kubo-Greenwood formalism accounting for nonpolar hole-phonon scattering (acoustic and optical), surface roughness scattering, polar phonon scattering, alloy scattering and remote phonon scattering. The novelty of this paper is studying the impact of channel width and length on the performance of InGaAs PMOSFET such as mobility and exploring physical insight for scaling the future III-V CMOS devices.
利用三维应力模拟研究了具有源极/漏极（S/D）应力源的应变铟镓砷（InGaAs）PMOSFET在不同长度和宽度下的应力分布。分析了由此产生的迁移率改善情况。发现对于宽尺寸器件，沿传输方向的压应力主导了空穴迁移率的提高。发现垂直于栅极氧化物的垂直方向上的应力对迁移率的影响最小，而在中等宽度区域，沿宽度方向的应力增强。使用考虑非极性空穴-声子散射（声学和光学）、表面粗糙度散射、极性声子散射、合金散射和远程声子散射的久保-格林伍德形式理论，分析了沟道宽度和长度对迁移率增益等性能改善的影响。本文的新颖之处在于研究沟道宽度和长度对InGaAs PMOSFET性能（如迁移率）的影响，并探索未来III-V族CMOS器件缩放的物理见解。
