Cho Gyu-Bong, Lee Sang-Hun, Sung Ho-Jin, Noh Jung-Pil, Ahn Hyo-Jun, Nam Tae-Hyun, Kim Ki-Won
School of Nano and Advanced Materials Science and Engineering, Research Institute for Green Energy Convergence Technology, Gyeongsang National University, 501 Jin Ju-Daero, Jin Ju 660-701, Republic of Korea.
J Nanosci Nanotechnol. 2012 Jul;12(7):5962-6. doi: 10.1166/jnn.2012.6240.
Si and Si/Ti films were fabricated on a Cu current collector (substrate) using the DC sputtering system. The Ti film as a buffer layer was inserted between the Si film and the Cu current collector. Their structural and electrochemical properties were investigated with various Ti film thicknesses of 20-90 nm. The Si and Ti films deposited on a polycrystalline Cu substrate were amorphous. The Si/Ti/Cu film electrode exhibited better electrochemical properties than the Si/Cu electrode in terms of capacity, charge-discharge efficiency, and cycleability. In the Si/Ti/Cu electrode, the film electrode with a 55 nm Ti film thickness showed the best electrochemical properties: 367 microA h/cm2 initial capacity, 91% efficiency, and 50% capacity retention after 100 cycles. These good electrochemical properties are attributed to the enhanced adhesion between the Si and Ti films. Additionally, the modified surface morphology of Si film with a cluster structure could withstand the lateral volume change during the charge-discharge process.
使用直流溅射系统在铜集流体（基底）上制备了硅膜和硅/钛膜。作为缓冲层的钛膜插入硅膜和铜集流体之间。研究了钛膜厚度为20 - 90纳米时它们的结构和电化学性能。沉积在多晶铜基底上的硅膜和钛膜是非晶态的。在容量、充放电效率和循环稳定性方面，硅/钛/铜膜电极比硅/铜电极表现出更好的电化学性能。在硅/钛/铜电极中，钛膜厚度为55纳米的膜电极表现出最佳的电化学性能：初始容量为367微安时/平方厘米，效率为91%，100次循环后容量保持率为50%。这些良好的电化学性能归因于硅膜和钛膜之间增强的附着力。此外，具有簇状结构的硅膜改性表面形态能够承受充放电过程中的横向体积变化。
