Department of Applied Physics and COMP Center of Excellence, Aalto University School of Science, P.O. Box 11000, FI-00076 Aalto, Espoo, Finland.
J Chem Phys. 2012 Sep 14;137(10):104902. doi: 10.1063/1.4750044.
Electrostatic correlation effects in inhomogeneous symmetric electrolytes are investigated within a previously developed electrostatic self-consistent theory [R. R. Netz and H. Orland, Eur. Phys. J. E 11, 301 (2003)]. To this aim, we introduce two computational approaches that allow to solve the self-consistent equations beyond the loop expansion. The first method is based on a perturbative Green's function technique, and the second one is an extension of a previously introduced semiclassical approximation for single dielectric interfaces to the case of slit nanopores. Both approaches can handle the case of dielectrically discontinuous boundaries where the one-loop theory is known to fail. By comparing the theoretical results obtained from these schemes with the results of the Monte Carlo simulations that we ran for ions at neutral single dielectric interfaces, we first show that the weak coupling Debye-Huckel theory remains quantitatively accurate up to the bulk ion density ρ(b) ≃ 0.01 M, whereas the self-consistent theory exhibits a good quantitative accuracy up to ρ(b) ≃ 0.2 M, thus improving the accuracy of the Debye-Huckel theory by one order of magnitude in ionic strength. Furthermore, we compare the predictions of the self-consistent theory with previous Monte Carlo simulation data for charged dielectric interfaces and show that the proposed approaches can also accurately handle the correlation effects induced by the surface charge in a parameter regime where the mean-field result significantly deviates from the Monte Carlo data. Then, we derive from the perturbative self-consistent scheme the one-loop theory of asymmetrically partitioned salt systems around a dielectrically homogeneous charged surface. It is shown that correlation effects originate in these systems from a competition between the salt screening loss at the interface driving the ions to the bulk region, and the interfacial counterion screening excess attracting them towards the surface. This competition can be quantified in terms of the characteristic surface charge σ(s)=√(2ρ(b)/(πl(B)), where l(B) = 7 Å is the Bjerrum length. In the case of weak surface charges σ(s)≪σ(s) where counterions form a diffuse layer, the interfacial salt screening loss is the dominant effect. As a result, correlation effects decrease the mean-field density of both coions and counterions. With an increase of the surface charge towards σ(s), the surface-attractive counterion screening excess starts to dominate, and correlation effects amplify in this regime the mean-field density of both type of ions. However, in the regime σ(s)>σ(s), the same counterion screening excess also results in a significant decrease of the electrostatic mean-field potential. This reduces in turn the mean-field counterion density far from the charged surface. We also show that for σ(s)≫σ(s)*, electrostatic correlations result in a charge inversion effect. However, the electrostatic coupling regime where this phenomenon takes place should be verified with Monte Carlo simulations since this parameter regime is located beyond the validity range of the one-loop theory.
我们在先前发展的静电自洽理论[R. R. Netz 和 H. Orland, Eur. Phys. J. E 11, 301 (2003)]中研究了非均匀对称电解质中的静电相关效应。为此,我们引入了两种计算方法,使自洽方程可以超越环展开进行求解。第一种方法基于微扰格林函数技术,第二种方法是将先前引入的用于单介电界面的半经典近似扩展到狭缝纳米孔的情况。这两种方法都可以处理介电不连续边界的情况,在这种情况下,单环理论是已知失效的。通过将这些方案得到的理论结果与我们在中性单介电界面上运行的离子蒙特卡罗模拟结果进行比较,我们首先表明,弱耦合德拜-休克尔理论在离子密度ρ(b) ≃ 0.01 M 时仍然具有定量准确性,而自洽理论在离子密度ρ(b) ≃ 0.2 M 时表现出良好的定量准确性,因此在离子强度方面将德拜-休克尔理论的准确性提高了一个数量级。此外,我们将自洽理论的预测与带电介电界面的先前蒙特卡罗模拟数据进行比较,并表明所提出的方法也可以准确处理表面电荷引起的相关效应,在这个参数范围内,平均场结果与蒙特卡罗数据显著偏离。然后,我们从微扰自洽方案中推导出具有均匀带电表面的不对称盐系统的单环理论。结果表明,在这些系统中,相关效应源自界面处盐的屏蔽损失将离子驱动到体相区域,以及界面抗衡离子的屏蔽过剩将它们吸引到表面的竞争。可以用特征表面电荷σ(s)*=√(2ρ(b)/(πl(B))来量化这种竞争,其中 l(B) = 7 Å 是 Bjerrum 长度。在弱表面电荷σ(s)≪σ(s)*的情况下,反离子形成扩散层,界面盐的屏蔽损失是主要效应。结果,相关效应降低了同电荷离子和抗衡离子的平均场密度。随着表面电荷向σ(s)*增加,表面吸引力的抗衡离子屏蔽过剩开始占主导地位,在这个区域内,两种类型的离子的平均场密度都会增强。然而,在σ(s)>σ(s)的区域,相同的抗衡离子屏蔽过剩也会导致静电平均场势的显著下降。这反过来又降低了远离带电表面的平均场抗衡离子密度。我们还表明,对于σ(s)≫σ(s),静电相关会导致电荷反转效应。然而,由于这种现象发生的静电耦合区域需要用蒙特卡罗模拟来验证,因为这个参数区域位于单环理论的有效性范围之外。